Method of forming capacitor for semiconductor memory device
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United States of America Patent
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Jan 8, 2002
Grant Date -
N/A
app pub date -
Jun 30, 2000
filing date -
Jul 1, 1999
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Disclosed herein is a method of forming a capacitor for a semiconductor memory device. The method comprises a step of:forming a lower electrode on the semiconductor substrate; forming an O.sub.3 -oxide film on the lower electrode; forming Si--O--N bonds on the surface of the O.sub.3 -oxide film; forming a TaON film on the Si--O--N bonds by a chemical vapor deposition of a Ta chemical vapor, an O.sub.2 gas and an NH.sub.3 gas; and forming an upper electrode on the TaON film.
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