Ferroelectric memory cell fabrication method
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United States of America Patent
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Jan 29, 2002
Grant Date -
N/A
app pub date -
Dec 15, 1999
filing date -
Jun 8, 1999
priority date (Note) -
Expired
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Abstract
A method for fabricating ferroelectric memory cells includes forming a first interlayer insulating film having a first opening on an underlayer, and forming a preparatory first electrode layer over the entire surface thereof. The preparatory first electrode layer is partially removed in a CMP process and a first electrode is formed by the remaining portion. Next, a second interlayer insulating film having a second opening that exposes the first electrode is formed. Portions of a preparatory ferroelectric film on the exposed surface of the first electrode and the upper surface of the second interlayer insulating film are formed mutually stepped. The portion of the preparatory ferroelectric film on the second interlayer insulating film is removed by a CMP process and the portion on the exposed surface is left remaining to form a ferroelectric film. A second electrode is formed on the ferroelectric film by CMP processing or photolithography.
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