Electronic circuit structure with photoresist layer that has non-precision openings formed by a laser
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United States of America Patent
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Feb 12, 2002
Issued Date -
N/A
app pub date -
Mar 23, 1999
filing date -
Sep 29, 1998
priority date (Note) -
Expired
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Abstract
A method for patterning a layer of photoresist includes the steps of 1) exposing the photoresist through a standard precision mask to define all possible cut points, 2) etching all possible cut points in a dielectric layer, 3) selectively exposing a second layer of photoresist with a non-precision targeting energy beam or mask to select the desired cut points. Consequently, no custom precision masks are required to pattern the various layers of photoresist during the fabrication of application specific integrated circuits (ASICs), thereby reducing both the lead-time and costs for manufacturing ASICs.
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