Method of fabricating capacitor dielectric
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 26, 2002
Grant Date -
N/A
app pub date -
Sep 3, 1999
filing date -
Sep 3, 1999
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention provides a method of fabricating capacitor dielectric layer. A bottom electrode covered by a native oxide layer on a chip is provided. The chip is disposed into a low pressure furnace. A mixture of dichlorosilane and ammonia is introduced into the low pressure furnace to form a nitride layer on the native oxide layer. In the same low pressure furnace, nitrogen monoxide or nitric oxygen is infused to form an oxynitride layer on the nitride layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully