Method and system for cleaning a chemical mechanical polishing pad
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United States of America Patent
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Mar 5, 2002
Grant Date -
N/A
app pub date -
May 28, 1999
filing date -
May 28, 1999
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A method and a system are provided for cleaning a CMP pad. The method starts by applying chemicals onto the surface of the CMP pad. The chemicals are then allowed to react with a residue that may be on the pad to produce by-products. Next, the pad surface is rinsed to substantially remove the by-products. A mechanical conditioning operation is then performed on the surface of the pad. In one example, the wafer surface can be a metal, such as copper. Where the wafer surface is copper, the chemical is most preferably HCl, and a solution includes HCl and DI water. Where the wafer surface is oxide, the chemical is most preferably NH.sub.4 OH, and the solution includes NH.sub.4 OH and DI water. Generally, the CMP pad can be in the form of a linear belt, in the form of an round disk, or in any other mechanical or physical configuration.
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