Sputter ion source for boron and other targets

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United States of America Patent

PATENT NO 6352626
SERIAL NO

09550360

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present invention relates to an improved ion source comprising a magnetron and cathode in a first housing and a cold cathode in a second housing. The second housing generally comprises a Penning cell to collimate an ion beam arising from the first housing. This arrangement provides an ion source capable of ejecting sputtered ions of the cold cathode magnetron discharge into a highly collimated, positive ion beam having low emittance angles. The invention also provides a cold cathode target for use in an ion source, and in particular, to an ion source having single or multiple targets of desired materials and/or dimensions to provide a rich source of boron ions in a manner allowing operation of the ion source free of producing significant toxic effects or corrosion. The invention also relates to a cold cathode target comprising a boron-containing material selected from the group consisting of a boron alloy, a boride, and mixtures thereof. The invention also relates to ion sources which comprise a single solid cathode disc or a multiple or array of solid cathode discs, or having a bore through on axis, in which the cathode is made of conductive materials such as metals, alloys and metal compounds. Example materials include indium, aluminum and indium phosphide. The ion source can be a source of positive gas ions.

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Patent Owner(s)

Patent OwnerAddress
VON ZWECK HEIMARTNot Provided

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
von, Zweck Heimart 17 Old Knoll Rd., Marion, MA 02738 1 11

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