MOS gate Schottky tunnel transistor and an integrated circuit using the same
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United States of America Patent
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Mar 5, 2002
Grant Date -
N/A
app pub date -
Nov 24, 1998
filing date -
Nov 28, 1997
priority date (Note) -
Expired
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Abstract
On a Schottky tunnel junction with Schottky metal as a source, an extremely thin and a high density impurities semiconductor layer having a conduction type different from that of a high density impurities semiconductor constituting the base junction is formed, and height and width of this extremely thin high density impurities semiconductor layer are controlled by adjusting a voltage loaded to a MOS gate formed on this tunnel junction section, so that a main portion of the drain current comprises a carrier passing through the barrier because of the tunnel effect and a carrier moving over this barrier. In addition, a CMOS structure is made to prepare a three-dimensionally or three-dimensionally integrated circuit.
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