Flash memory device capable of minimizing a substrate voltage bouncing and a program method thereof
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United States of America Patent
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Mar 5, 2002
Grant Date -
N/A
app pub date -
Jun 20, 2000
filing date -
Jun 22, 1999
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Disclosed is a nonvolatile semiconductor memory device which comprises a controller for controlling block select signal generators. The controller simultaneously activates the block select signal generators in a bit line setup and a recovery period, so that the word lines in each of memory blocks are set to a predetermined voltage (for example, a ground voltage, a power supply voltage, or an intermediate voltage), respectively. According to the control scheme, by attenuating a bouncing of a substrate voltage caused in an instant by means of a capacitive coupling between a bit line and a substrate at a transition of a bit line voltage, there are prevented an under program and a program disturb during a program cycle.
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