Abrasive and method for polishing semiconductor substrate
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United States of America Patent
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Mar 12, 2002
Grant Date -
N/A
app pub date -
Jan 6, 1999
filing date -
May 7, 1997
priority date (Note) -
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Abstract
A semiconductor wafer or a film formed thereon is polished by using a polishing agent comprising abrasive containing silica particles as the main component, water as a solvent, and a water-soluble cellulose, an alkali metal impurity content of the polishing agent being 5C ppm or less where the polishing agent contains C % by weight of the water-soluble cellulose, so as to flatten the semiconductor wafer without doing damage to the wafer or the film formed thereon and without bringing about a dishing problem in the polished surface.
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