Method to form narrow structure using double-damascene process

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United States of America Patent

PATENT NO 6355528
SERIAL NO

09426911

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Abstract

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A narrow groove is formed over a substrate. To form such a narrow groove, a first material is formed over a substrate, the first material having a sidewall. A spacer is formed abutting the sidewall. Subsequently a second material is formed adjacent to the spacer. The spacer is removed leaving a groove between the first material and second material. In one embodiment, the groove is filled with material for a narrow feature, such as a gate, and the first material and second material are removed. As a result a gate or other narrow feature is formed having a length defined by the width of a spacer. In another embodiment, an implant is performed through the small groove, resulting in a small localized implant.

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Patent Owner(s)

Patent OwnerAddress
GLOBALFOUNDRIES INCMAPLES CORPORATE SERVICES LIMITED PO BOX 309 UGLAND HOUSE GRAND CAYMAN KY1-1104

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishida, Emi Sunnyvale, CA 41 983
Luning, Scott Austin, TX 61 1760
Thurgate, Tim Sunnyvale, CA 13 160

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