High aspect ratio deep trench capacitor having void-free fill
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United States of America Patent
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Mar 19, 2002
Issued Date -
N/A
app pub date -
Nov 14, 2000
filing date -
Sep 28, 1998
priority date (Note) -
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Abstract
A trench capacitor comprising a substrate, a trench formed in the substrate, and conductive doped germanium or silicon-germanium alloy fill material completely filling the trench. The process for creating the capacitor comprises depositing the conductive doped germanium or silicon-germanium alloy in the trench and in a fill layer over the substrate and annealing the wafer at a temperature at which the fill layer melts and completely flows into the trench but the wafer does not melt. The process further includes depositing a silicon cap layer on top of the fill layer to prevent oxidation of the fill layer. The trench may further include one or more of a buffer layer, a metal layer, and a thermal-stress-reduction layer between the trench walls and the fill material.
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