Method for fabricating a semiconductor device in a magnetron sputtering system
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United States of America Patent
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Mar 26, 2002
Grant Date -
N/A
app pub date -
Dec 22, 1997
filing date -
Dec 27, 1996
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Disclosed is a magnetron sputtering system enabling formation of a film of a ferroelectric substance by suppressing occurrence of a magnetic field due to an eddy current. The magnetron sputtering system includes a flat target; magnetic field applying means (magnets), provided in the vicinity of a back surface of the target, for applying a magnetic field to a front surface of the target; and magnetic field rotating means (motor) for rotating the magnetic field applying means so as to rotate the magnetic field applied to the front surface of the target. The magnetic field rotating means is provided with rotational speed varying means (speed controller) for varying the rotational speed of the magnetic field applied by the magnetic field rotating means.
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