Method for enhancing the adhesion of copper deposited by chemical vapor deposition
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United States of America Patent
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Mar 26, 2002
Grant Date -
N/A
app pub date -
Mar 9, 1999
filing date -
Mar 9, 1999
priority date (Note) -
Expired
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Abstract
The present invention provides a method for improving the adhesion of copper and other metal-comprising conductive metals to a barrier layer. A barrier layer is provided that has a first surface that is substantially unoxidized, wherein at least a portion of the first surface is free from the presence of oxygen atoms. A conductive layer is then deposited onto the first surface of the barrier layer. The substantially unoxidized state of the first surface enhances the adhesion of the metal-comprising layer to the barrier layer. The method is particularly useful in obtaining excellent adhesion of a copper nucleation layer to an underlying barrier layer surface.
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