In-situ monitoring of electrical properties by ellipsometry
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United States of America Patent
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Mar 26, 2002
Grant Date -
N/A
app pub date -
May 10, 1999
filing date -
Dec 23, 1996
priority date (Note) -
Expired
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Abstract
A method of monitoring material parameters of a sample (4) (for example electrical properties of a semiconductor) during processing (for example during manufacture) which uses ellipsometric techniques to study the changes induced in the ellipsometric spectra of the material, by modulation of the internal electric field of the material, and determining from these changes the material parameters of interest The means of modulation can be a source of electromagnetic radiation, for example a laser (8). The ellipsometer used may include an array of photodetectors. The process allows the real time monitoring of the process under examination.
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