Method for forming a thin film resistor
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United States of America Patent
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-
Apr 2, 2002
Grant Date -
N/A
app pub date -
Sep 22, 2000
filing date -
Apr 11, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The invention provides a method for forming a thin film resistor, which comprises the following steps: providing an insulator substrate; forming a patterned conductive layer over the insulator substrate by a non-photolithographic method; forming a thin film resistive layer on the patterned conductive layer and the insulator substrate; patterning the thin film resistive layer by photolithography. Using the method for forming a thin film resistor in accordance with the invention, the fabrication costs of the thin film resistor can be lowered.
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