Semiconductor device and method of manufacturing the same
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United States of America Patent
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Apr 2, 2002
Grant Date -
N/A
app pub date -
Oct 14, 1997
filing date -
Oct 15, 1996
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device having performance comparable with a MOSFET is provided. An active layer of the semiconductor device is formed by a crystalline silicon film crystallized by using a metal element for promoting crystallization, and further by carrying out a heat treatment in an atmosphere containing a halogen element to carry out gettering of the metal element. The active layer after this process is constituted by an aggregation of a plurality of needle-shaped or column-shaped crystals. A semiconductor device manufactured by using this crystalline structure has extremely high performance.
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