Method for forming a metal wiring structure of a semiconductor device
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United States of America Patent
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Apr 2, 2002
Issued Date -
N/A
app pub date -
Nov 2, 1999
filing date -
Feb 28, 1996
priority date (Note) -
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Abstract
A metal wiring stricture includes a conduction line, an insulator film for electrically insulating the conduction line, and a transmutation layer formed as the density of a portion of the insulator film adjacent to the conduction line is increased or by adding impurities to the insulator film. A metal wiring forming method for a semiconductor device, includes the step of forming a trench in a given portion of a silicon oxidation film formed on a semiconductor substrate, forming a transmutation layer on a surface of the silicon oxidation film, and depositing a conductive material on the transmutation layer to form a conduction line, whereby diffusion of the conductive material is prevented.
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