High-frequency input/output feedthrough and package for housing a high-frequency semiconductor element
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United States of America Patent
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Apr 9, 2002
Grant Date -
N/A
app pub date -
Aug 27, 1998
filing date -
Aug 28, 1997
priority date (Note) -
In Force
status (Latency Note)
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Abstract
In a conventional high-frequency input/output feedthrough having a microstrip line, for a millimeter wave band, the reliability of a hermetic seal portion was low and transmission characteristics in the millimeter wave band were not preferable. A high-frequency input/output feedthrough of the present invention includes: a dielectric substrate with a ground conductor on a bottom face thereof; a wall member joined onto the top face of the dielectric substrate; a pair of line conductors formed in line with each other on both sides of the wall member on the top face of the dielectric substrate; an inside-layer line conductor which is formed to be in line and parallel with the pair of line conductors below the wall member inside the dielectric substrate, both ends of which are electrically connected by through conductors, to respective end portions of the pair of line conductors on both sides of the wall member, wherein an interval of the through conductors are set to be a quarter of a wavelength of a high-frequency signal to be used. The high-frequency input/output feedthrough is characterized by a hermetic seal portion of high reliability and preferable transmission characteristics.
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