Barium strontium titanate integrated circuit capacitors and process for making the same
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United States of America Patent
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Apr 16, 2002
Issued Date -
N/A
app pub date -
Jul 19, 1994
filing date -
Dec 13, 1991
priority date (Note) -
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Abstract
Integrated circuit capacitors in which the capacitor dielectric is a thin film of BST having a grain size smaller than 2000 .ANG.. Typical gain sizes are 40 nanometers and less. The BST is formed by deposition of a liquid precursor by a spin-on process. The original liquid precursor includes an alkoxycarboxylate dissolved in 2-methoxyethanol and an xylene exchange is preformed just prior to spinning. The precursor is dried in air at a temperature of about 400.degree. C. and then furnace annealed in oxygen at a temperature of between 675.degree. C. and 850.degree. C.
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