Laser cutting of semiconductor materials

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United States of America Patent

PATENT NO 6376797
SERIAL NO

09626708

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Abstract

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A method of cutting thin bodies of silicon so as to minimize edge damage comprises traversing said bodies with the beam of a pulsed laser in a vacuum or in the presence of forming gas or a noble gas.

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Patent Owner(s)

Patent OwnerAddress
U S DEPARTMENT OF ENERGYWASHINGTON DC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kalejs, Juris P Wellesley, MA 10 262
Piwczyk, Bernhard P Dunbarton, NH 11 278

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