Electroluminescent device comprising porous silicon
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United States of America Patent
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Apr 30, 2002
Grant Date -
N/A
app pub date -
Sep 17, 1997
filing date -
Mar 20, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An electroluminescent device (10) comprises a porous silicon region (22) adjacent a bulk silicon region (20), together with a top electrical contact (24) of transparent indium tin oxide and a bottom electrical contact (26) of aluminum. The device includes a heavily doped region (28) to provide an ohmic contact. The porous silicon region (22) is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device (10) has a rectifying p-n junction within the porous silicon region (22).
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