Method and system for identifying etch end points in semiconductor circuit fabrication
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United States of America Patent
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Apr 30, 2002
Grant Date -
N/A
app pub date -
May 25, 1999
filing date -
Jun 20, 1998
priority date (Note) -
Expired
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Abstract
Disclosed is a spectrometer system with unique wavelength resolution improving relative positioning of diffraction grating and detector. Also disclosed is a modified evolving windowed factor analysis based method of detecting semiconductor etch end points which is particularly well suited for use in real time monitoring and process control. Use of wavelength group selecting mask filters is also disclosed.
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