Chemical vapor deposition precursors

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United States of America Patent

PATENT NO 6383669
SERIAL NO

09423750

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Abstract

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Zirconium precursors for use in depositing thin films of or containing zirconium oxide using an MOCVD technique have the following general formula: Zr.sub.x (OR).sub.y L, wherein R is an alkyl group; L is a .beta.-diketonate group; x=1 or 2; y=2, 4 or 6; and z=1 or 2.

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Patent Owner(s)

Patent OwnerAddress
HANGER SOLUTIONS LLC44 MILTON AVENUE SUITE 254 ALPHARETTA GA 30009

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Crosbie, Michael J Malvern, GB 2 18
Jones, Anthony C Prescot, GB 44 472
Lane, Penelope A Malvern, GB 1 13
Leedham, Timothy J Diss Norfolk, GB 3 40
Williams, Dennis J Malvern, GB 5 107
Wright, Peter J Malvern, GB 35 1058

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