Semiconductor device and process
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United States of America Patent
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May 7, 2002
Grant Date -
N/A
app pub date -
Oct 29, 1999
filing date -
Oct 29, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A process for manufacturing a semiconductor device includes the formation of tungsten contact plugs suitable for very small geometry devices. As part of the process a tungsten barrier layer is deposited into vias and covering the walls of the vias by a process of ionized metal plasma deposition. The tungsten layer deposited in this manner provides a barrier layer, adhesion layer, and nucleation layer for the subsequent chemical vapor deposition of tungsten contact plug material. Together the two layers of tungsten form contact plugs having a low resistance even when used in the fabrication of very small geometry devices.
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