Low dielectric constant material for integrated circuit fabrication
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United States of America Patent
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May 7, 2002
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N/A
app pub date -
Sep 3, 1998
filing date -
Sep 3, 1998
priority date (Note) -
Expired
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Abstract
A method is provided for forming a material with a low dielectric constant, suitable for electrical isolation in integrated circuits. The material and method of manufacture has particular use as an interlevel dielectric between metal lines in integrated circuits. In a disclosed embodiment, methylsilane is reacted with hydrogen peroxide to deposit a silicon hydroxide layer incorporating carbon. The layer is then treated by exposure to a plasma containing oxygen, and annealing the layer at a temperature of higher than about 450.degree. C. or higher.
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