Micro-dynode integrated electron multiplier
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United States of America Patent
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May 7, 2002
Grant Date -
N/A
app pub date -
Oct 30, 1997
filing date -
Oct 30, 1996
priority date (Note) -
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Abstract
A microdynode electron multiplier provides numerous microchannels extending parallel to one another through a layered structure incorporating insulating spacer layers and dynode layers which either incorporate a conductive electrode layer or are contiguous with a conductive electrode layer. The dynode layers include materials with high electron emissivity. The dynode layers can be biased to different electrical potentials to provide a potential gradient along the length of each microchannel. Multi-stage electron multiplication provides high gain. The device desirably is formed as a monolithic, sealed structure with a cathode structure such as a photocathode and an anode structure. The device can provide a multi pixel imaging device of extremely high sensitivity and resolution.
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