Importance

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Abstract

The present invention provides a multilevel non-volatile semiconductor memory device comprising: plural memory cells having plural threshold levels for allowing the plural memory cells to turn ON or OFF in accordance with relationships of word levels to the plural threshold levels; a word level generator circuit generating the word levels in every read out time periods for the plural threshold levels; a memory cell read-out circuit for reading out informations from the memory cells; dummy memory cells receiving inputs of the word levels and having substantially the same threshold levels as the memory cells for allowing the dummy cells to turn ON with delay from the memory cells; and a read out end timing controller for controlling the word level generator circuit to discontinue rising the word level when the dummy memory cell turns ON, and also for controlling the memory cell read-out circuit to finish the read out operations.

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First Claim