Single substrate processing CVD procedure for depositing a metal film using first and second CVD processes in first and second process chambers
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United States of America Patent
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May 14, 2002
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app pub date -
Feb 23, 2000
filing date -
Mar 20, 1998
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Abstract
In the field of depositing a metal film for wiring purposes on a substrate by means of single-substrate processing CVD, a procedure for depositing a copper film on a substrate is carried out by utilizing a first CVD module in which film deposition is carried out under first film deposition conditions where the film deposition rate is low and the filling characteristics are good, and a second CVD module in which film deposition is carried out under second film deposition conditions where the film deposition rate is high and the filling characteristics are poor. One CVD film deposition process in which a metal film for wiring purposes is deposited is carried out with sub-processes based on two different sets of film deposition conditions.
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