Reduced surface charging in silicon-based devices
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United States of America Patent
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May 14, 2002
Grant Date -
N/A
app pub date -
Jan 19, 2001
filing date -
Jan 19, 2001
priority date (Note) -
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Abstract
A method of treating silicon-based surfaces for reducing charge migration is disclosed. In accordance with the method, a silicon-based surface is treated with Nitrogen-rich pacifying gas environment, after the surface is actuated. The surface is actuated in a drying step, wherein residual water or moisture is removed from the surfaces at an elevated temperature and a reduced pressure. The method of the instant invention is particularly useful for the treatment of ribbon surfaces in grating light valve device, wherein after the ribbon surfaces are treated according to the current invention, surface charging remains low for several days, even in open air conditions.
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