Semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 14, 2002
Issued Date -
N/A
app pub date -
Apr 17, 2001
filing date -
Jun 7, 2000
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The object of the invention is to improve a characteristic under a reverse bias. A P base layer (6) is provided as a plurality of band-shaped portions parallel with each other. A P.sup.+ base layer to be a downward protrusion having a high impurity concentration is not formed in a bottom portion of the P base layer (6). The P base layer (6) is formed more shallowly than an N layer (17), and furthermore, the band-shaped portions forming the P base layer (6) are coupled to each other at ends thereof. Moreover, an N source layer (5) is ladder-shaped and is connected to a source electrode (16) through only a crosspiece portion thereof.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully