Semiconductor device and method for fabricating the same
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United States of America Patent
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May 21, 2002
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N/A
app pub date -
Sep 7, 1999
filing date -
Apr 21, 1997
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Abstract
A semiconductor device which is applied to access transistors of an SRAM cell to improve its operation performance and a method for fabricating the same are disclosed. The semiconductor device includes a gate insulating layer formed on a semiconductor substrate, a gate electrode formed on the gate insulating layer, lightly doped impurity regions having different lengths beneath surface of the semiconductor substrate at first and second sides of the gate electrode, and heavily doped impurity regions formed beneath the surface of the semiconductor substrate, extending from the lightly doped impurity regions.
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