Active feedback pulsed measurement method
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United States of America Patent
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May 28, 2002
Grant Date -
N/A
app pub date -
Apr 14, 2000
filing date -
Apr 14, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A pulse measurement method is applied to test devices such as high power FET transistors for measuring DC device parameters as well as for measuring S parameters during AC testing. The method uses an input gate bias tee for applying an accurately shaped pulsed input, a sensing bias tee for sensing terminal voltages, such as drain voltages for an FET, and a drive bias tee for coupling in a feedback signal provided by an active feedback circuit receiving AC coupled input error signal of the DC terminal voltage and for providing a drive signal as an error signal so as to maintain the applied DC test voltages at stable levels for improved accuracy.
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