LED with spreading layer
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United States of America Patent
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May 28, 2002
Grant Date -
N/A
app pub date -
Dec 2, 1999
filing date -
Dec 2, 1998
priority date (Note) -
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Abstract
A semiconductor device has a window layer (8), a current spreading layer (7) below the window layer and a cladding layer (6) below the current spreading layer. The band gap energy of the spreading layer is higher than that of the window layer and lower than that of the cladding layer and the carrier concentration of the spreading layer is lower than that of the window layer and higher than that of the cladding layer.
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