Method for manufacturing semiconductor memory and method for manufacturing capacitor
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United States of America Patent
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Jun 4, 2002
Issued Date -
N/A
app pub date -
Apr 25, 2001
filing date -
Apr 28, 2000
priority date (Note) -
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Abstract
A method of manufacturing a semiconductor memory cell is provided. The semiconductor memory cell can include a memory cell transistor (10) and a capacitor. The capacitor can be formed in a groove (13) formed in an interlayer insulation film (12). The capacitor can have a lower electrode including a selective growth film (18) which may be selectively deposited on a lower electrode film (16). Selective growth film (18) can be a ruthenium film having a thickness of approximately 5.about.10 nm and may serve as a buffer which may prevent lower electrode and a capacitor insulation film (20) from deterioration in integrity which could cause increased leakage currents.
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