Process for fabricating a planar heterostructure

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United States of America Patent

PATENT NO 6399502
SERIAL NO

09540188

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Abstract

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The process comprises: etching, in a semiconductor substrate (2), at least one trench (3) with predetermined width and depth; depositing, on the substrate and in the trench, a stack of successive and alternate layers of Si.sub.1-x Ge.sub.x (0

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Patent Owner(s)

Patent OwnerAddress
FAHRENHEIT THERMOSCOPE LLC2215-B RENAISSANCE DRIVE SUITE 5 LAS VEGAS NV 89119

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bensahel, Daniel Grenoble, FR 32 486
Campidelli, Yves Grenoble, FR 24 353
Hernandez, Caroline Grenoble, FR 15 314
Rivoire, Maurice Meylan, FR 22 246

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