Method and system for copper interconnect formation
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United States of America Patent
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Jun 4, 2002
Grant Date -
Nov 15, 2001
app pub date -
Oct 20, 1997
filing date -
Oct 20, 1997
priority date (Note) -
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Abstract
A system and method for reducing contamination in a semiconductor device formed on a substrate is disclosed. The method and system include providing a barrier metal layer on the substrate. A first portion of the barrier metal layer is thinner than a second portion of the barrier metal layer. The method and system further include removing the first portion of the barrier metal layer.
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