Semiconductor manufacturing method and semiconductor manufacturing apparatus
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United States of America Patent
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Jun 4, 2002
Grant Date -
N/A
app pub date -
Mar 9, 2000
filing date -
Mar 10, 1999
priority date (Note) -
Expired
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Abstract
In an atmosphere of processing gas, on a wafer W consisting mainly of silicon, through a planar-array antenna RLSA 60 having a plurality of slits, microwaves are irradiated to generate plasma containing oxygen, or nitrogen, or oxygen and nitrogen and to implement therewith on the surface of the wafer W direct oxidizing, nitriding, or oxy-nitriding to deposit an insulator film 2 of a thickness of 1 nm or less in terms of oxide film. A manufacturing method and apparatus of semiconductors that can successfully regulate film quality of the interface between a silicon substrate and a SiN film and can form SiN film of high quality in a short time can be obtained.
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