Electronically-eraseable programmable read-only memory having reduced-page-size program and erase
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United States of America Patent
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Jun 4, 2002
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app pub date -
May 3, 2000
filing date -
May 3, 2000
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Abstract
By reducing the size of the blocks or pages that are contained in a FLASH EEPROM array that must be erased in a write or erase operation, the size of register needed is reduced, making it easier for the processor to handle smaller blocks of information, reducing the size and complexity of the microprocessor, and increasing the endurance of the FLASH EEPROM allowing it to be used in place of the state of the art EEPROM. Replacing mask ROM by flash EEPROM allows full testing of the code storage area as well as allowing customers to use that space for testing in their manufacturing procedures. The code used for testing can then be cleared and reprogrammed with the final code storage before final shipment.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- EM MICROELECTRONIC-MARIN SA;SILICON STORAGE TECHNOLOGY, INC.
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Allum, Dean | Monument, CO | 4 | 53 |
Barnett, Philip C | Oxon, GB | 13 | 645 |
Blyth, Trevor | Sandy, UT | 23 | 859 |
Sowards, David | Fremont, CA | 8 | 151 |
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Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
---|---|---|---|
Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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