Substrate processing method and substrate processing unit
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United States of America Patent
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Jun 11, 2002
Grant Date -
N/A
app pub date -
Sep 8, 1999
filing date -
Sep 8, 1998
priority date (Note) -
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Abstract
Process gas supply/stop operations are intermittently performed. As the hydrophobic process progresses, the temperature of a gas contract portion of a wafer lowers. While the hydrophobic process stops, the temperature of the gas contact portion of the wafer rises to the original temperature. Thereafter, the hydrophobic process resumes. Thus, while the temperature of the gas contact portion of wafer is suppressed from largely lowering, the hydrophobic process can be performed. Thus, non-uniformity of the hydrophobic process on the front surface of the wafer is reduced.
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