Importance

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Abstract

A heat treatment apparatus and a substrate processing apparatus having the heat treatment apparatus incorporated therein are provided. Nitrogen gas flowing through a gas inlet (16) into a chamber (15) is diffused by a diffusion filter (18) to produce a uniform laminar flow in a horizontal direction, and the laminar flow exits from the chamber (15) through an opening (41) to prevent outside air from entering the chamber (15), thereby maintaining a low oxygen concentration atmosphere within the chamber (15). Performing heat treatment upon a substrate by a heater (30) within the chamber (15) prevents oxygen molecules from being introduced into a film on the substrate to provide a low dielectric constant of the film. Within the chamber (15), the substrate (W) held on a transport arm (60) in which a coolant is circulated is rapidly cooled down. Thus, processing time is shortened, and high processing efficiency is provided. Therefore, the heat treatment apparatus can form the predetermined film having a low dielectric constant and provide high processing efficiency.

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First Claim