Delta-doped CCD's as low-energy particle detectors and imagers
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United States of America Patent
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Jun 11, 2002
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app pub date -
Sep 29, 1998
filing date -
Sep 29, 1997
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Abstract
The back surface of a thinned charged-coupled device (CCD) is treated to eliminate the backside potential well that appears in a conventional thinned CCD during backside illumination. The backside of the CCD includes a delta layer of high-concentration dopant confined to less than one monolayer of the crystal semiconductor. The thinned, delta-doped CCD is used to detect very low-energy particles that penetrate less than 1.0 nm into the CCD, including electrons having energies less than 1000 eV and protons having energies less than 10 keV.
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