Method of making light emitting diode displays
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United States of America Patent
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Jun 11, 2002
Issued Date -
N/A
app pub date -
Dec 23, 1994
filing date -
Jan 18, 1991
priority date (Note) -
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Abstract
Light emitting diodes (LEDs) and LED bars and LED arrays formed of semiconductive material, such as III-V, and particularly AlGaAs/CaAs material, are formed in very thin structures using organometallic vapor deposition (OMCVD). Semiconductor p-n junctions are formed as deposited using carbon as the p-type impurity dopant. Various lift-off methods are described which permit back side processing when the growth substrate is removed and also enable device registration for LED bars and arrays to be maintained.
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