Methods for low and ambient temperature preparation of precursors of compounds of group III metals and group V elements
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United States of America Patent
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Jun 18, 2002
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N/A
app pub date -
Jul 12, 1999
filing date -
Jul 22, 1998
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Expired
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Abstract
Processes are provided for preparation of precursors of Group III-V compounds, i.e., nitrides, phosphides, arsenides, antimonides and bismuthides of boron, aluminum, gallium and indium. The precursors are easily converted, e.g., by thermal decomposition, to the Group III-V compounds which are useful as thin-film coatings for aerospace components or as powders which may be shaped as desired.
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