p-Type group II-VI compound semiconductor crystals growth method for such crystals, and semiconductor device made of such crystals
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United States of America Patent
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Jun 18, 2002
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May 18, 2000
filing date -
May 21, 1999
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Abstract
A method of growing p-type group II-VI compound semiconductor crystals, includes a step of forming ZnO layers and ZnTe layers alternately on a ZnO substrate, the ZnO layer being not doped with impurities and having a predetermined impurity concentration, and the ZnTe layer being doped with p-type impurities N to a predetermined impurity concentration or higher.
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