Field effect transistor with a buried and confined metal plate to control short channel effects
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United States of America Patent
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Jun 18, 2002
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N/A
app pub date -
Jun 15, 2001
filing date -
Jun 15, 2001
priority date (Note) -
Expired
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Abstract
A field effect transistor (FET) is formed on a silicon on insulator (SOI) substrate in the thin silicon layer above the insulating buried oxide layer. The channel region of the FET includes a buried and confined metal plate for controlling short channel effects without significantly increasing junction capacitance.
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