SEMICONDUCTOR INTEGRATED SWITCHING CIRCUIT
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United States of America Patent
Stats
-
Jun 18, 2002
Grant Date -
Jun 20, 2002
app pub date -
Mar 29, 2001
filing date -
Dec 7, 2000
priority date (Note) -
Granted
status (Latency Note)
Importance
Abstract
The semiconductor integrated switching circuit S1 employed in a dual-band mobile phone comprises the first through fourth field effect transistor 1, 2, 3, 4 by which electrical connection between either of the first through fourth input/output terminal 22 through 25 and the common input-output terminal 21 are controlled, the fifth field effect transistor 5 which becomes conducting with the second field effect transistor 2, and the series resonance circuit 51 having a resonance frequency equals to a frequency of higher harmonic of the signal passing through the second field effect transistor 2. The fifth field effect transistor 5 and the series resonance circuit 51 are connected in series and attached between the common input-output terminal 21 and the ground so as to divert the higher harmonic of the signal without giving passing loss to the signal.
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