Resist film forming method and resist coating apparatus

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United States of America Patent

PATENT NO 6410194
SERIAL NO

09497156

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Abstract

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When a resist film is formed by discharging a resist solution onto the front face of a wafer housed in a cup, a relation between the film thickness of a resist film and the line width of a circuit pattern when the resist film is exposed into a predetermined pattern and thereafter developed is obtained in advance, from that relation, a line width with less variations corresponding to the changes in film thickness of the resist film is selected from among line widths within a designated region to form a resist film to have the film thickness corresponding to the selected line width. Accordingly, the line width of the circuit pattern after development is not likely to vary regardless of the changes in film thickness of the resist film formed on the wafer.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yoshihara, Kosuke Kumamoto-Ken, JP 18 308

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