Method of manufacturing a semiconductor device with TFT

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United States of America Patent

PATENT NO 6410368
SERIAL NO

09696165

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Abstract

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A strip-like first insulating layer is formed on a glass substrate, and a second insulating layer is formed on the first insulating layer. Furthermore, an island-like semiconductor layer is formed on the second insulating layer. The island-like semiconductor layer is crystallized by irradiation with laser light through both surfaces of the glass substrate.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTDJAPAN'S KANAGAWA PREFECTURE ATSUGI CITY ATSUGI-SHI KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kasahara, Kenji Kanagawa, JP 106 2943
Kawasaki, Ritsuko Kanagawa, JP 51 2495
Ohtani, Hisashi Kanagawa, JP 444 21462

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