Semiconductor device and method of manufacturing the same
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United States of America Patent
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Jun 25, 2002
Grant Date -
N/A
app pub date -
Nov 20, 1998
filing date -
Jun 15, 1998
priority date (Note) -
Expired
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Abstract
A relatively thick gate oxide film and a relatively thin gate oxide film are formed on a surface of silicon substrate. In a region exactly under the relatively thick gate oxide film, a halogen is added only within a depth range of no more than 2 nm from the main surface of silicon substrate. Thus, a semiconductor device having a dual gate oxide and a method of manufacturing the same can be obtained capable of reducing damage to the substrate through a simplified process.
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