Controlled cleavage process and device for patterned films

Number of patents in Portfolio can not be more than 2000

United States of America

SERIAL NO

09316493

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Abstract

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A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

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Patent Owner(s)

  • SILICON GENESIS CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheung, Nathan Albany 22 2466
Henley, Francois J Los Gatos 178 9676

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